Technological advances are tireless, standards are finalized and manufacturers begin to explore the limits of new products to launch.
The NAND Flash industry has come to an extreme and a disruptive launch could put this trend on the market and leave everything in place within a few months. So, presented by SK Hynix may be a statement before the purpose of 2020 what better to bring?
4D NAND officially came on stage: 128 layers and up to 2TB
More than a year and a half later this technology was discussed as a concept prior to its inception, SK Hynix was able to show for the first time the first virtual products driven by this cell type.
Although the development of this new NAND 4D has not changed completely, it is a fact that they are a step ahead of achieving high-end devices. And the introduction of development technology will come in two phases, the first of which has been identified at CES 2020.
In it, so-called charge-trap flash or CTF They are grouped together by edge blocks, which manage to maintain the traditional 2D structure, a major obstacle to increasing the capacity of chips in this technology. Therefore, SK Hynix failed to produce high-capacity SSDs to their competitors better. This will happen when the technology matures and thus maximize SSD more than 2 TB.
Three SSDs shown, RAM RDIMM DDR5, LPDDR4X and LPDDR5 are all trademarks
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SK Hynix showed three very efficient SSDs, of which two are M.2 under PCIe 3.0 x4 and the remaining one is SATA SSD. Fictional models Platinum P31, Gold P31 and Gold S31 respectively, where as note to know, the first two are technologically the same, that is, sharing all hardware features.
In addition, they do integrally new compositions, including its controller and NAND Flash under 4D 128 layers. The fact of classification models comes from the power point of view, since Platinum P31 will only be offered with a 2 TB and 1,500 TBW, while Gold P31 will be offered at 500 GB and 1 TB with 375 TBW and 750 TBW.
Their speed will be 3,500 MB / s and 3,200 MB / s through reading and writing respectively. In DDR5, the foregoing does not reveal the active information, because the focus is on future servers being RDIMM format and it is only revealed that its initial speed will be 4,800 MHz impressed capacity at 64 GB each.
No delivery dates or any additional information provided, as well as data from LPDDR4X, or LPDDR5, the brand has only hinted that it will be future memories for new 5G phones and that their speed will reach 4,667 MT / s, and the second one will pressure to work even more.