As you know, in today's computer a binary system is used to manage data, alone with zeros. These and zeros can be represented by letting go or not letting power pass or many other ways. As you'll probably guess from the name, this kind of memory is so effective in its ability that it has the power to change phase, or more change the mood of the story on which it was built.
What is memory phase modification (PCM)?
This type of memory, also called PRAM, PCRAM or PCM (Phase Change Memory) is a type of memory. unwavering memory, which means that when we turn off a PC or there is a power outage, it doesn't lose the data it contains, with the benefits that this could put on the PC, such as the ultra-fast reboot or the reboot as we had when we turned it off and off.
Strford Ovshinsky examined the structures of a glass of chalcogen and its ultimate strength in the 60s, and of itself Gordon Moore (founder of Intel) published an article in Electronics magazine in 1970 about this information. The vitality of the substance, made with amphigen, can be achieved in two provinces: crystalline and amorphous, the ability to change with temperature. Therefore, it is able to represent them and the zeros of the binary system, as it works on a modern computer.
These two regions of the chalcogen glass have very different repetitions that are the basis for the storage of information in the binary system. The amorphous state has high resistance and represents zeros, while the crystalline state has low resistance and resistance. Surprisingly, the material is also used on CDs and DVDs, in this case only when its counterfeit structures are used and not reused.
When can we expect the arrival of PRAM memory?
PRAM has not yet reached its commercial stage, although in reality all existing prototypes use chalcogenic germanium, antimony and tellurium alloy called GST. It is heated to 600ºC chalcogen saturation temperature, and then frozen to replace the amorphous vitreous atmosphere of high electrical resistance. By burning above its crystalline point but below its melting point, it is transformed into a crystalline form of partial resistance.
This phase change process can be completed in 5 days (according to the Samsung Samsung patent), a period that is comparable to that of dynamic memory such as DRAM, whose duration is in the range of 2 ns. The problem is that they are still looking for ways to apply this change to the PC temperatures, so no date has been set.
Nanochip licenses all PRAM-based technologies for use in MEMS (microelectromechanical) in 2004 and, in fact, all of the images you see of PRAM including the above, are from their products.
In 2006, Samsung announced a 256 Mb device that used diodes, which at that time meant a lot of compression compared to the existing DRAM, and was the main reason why it was proposed as a replacement for Flash memory. The prototype presented had a 46.7nm origin better than any other DRAMs on the market. In any case, everything was there again nothing has been heard of Samsung ever since.